Transforming the Economics of Storage

Intel® 3D NAND Technology extends our leadership in flash memory with an architecture designed for higher capacity and optimal performance, a proven manufacturing process providing accelerated transitions and scaling, and rapid portfolio expansion for multiple market segments.

Storage Capacity Empowered by Intel® Innovation

Intel introduces the world’s first PCIe* SSDs with QLC technology. Intel® QLC 3D NAND Technology provides up to 33% higher capacity1 than its 3D NAND predecessor. It also uniquely features PCIe* acceleration, to deliver a reliable mix of performance, capacity, and value-making it a smart storage solution for both datacenter and client markets.

Intel® QLC Technology leverages current 3D NAND, with a proven 64-layer structure, and adds a new cell that provides 4bits/cell (QLC), making it the world's highest-density flash memory. Additionally, this technology uses a floating gate cell because it is a reliable, low-cost storage method. Last, Intel® QLC Technology was paired with PCIe*- (NVMe*) technology, to provide up to a 4x performance benefit over SATA interfaces.2

Prepare for the future with Intel QLC-built on reliable Intel® technology and backed by Intel manufacturing leadership.

Finally, SSD Performance Meets Big Business Value

For datacenters, Intel® QLC 3D NAND Technology radically shrinks HDD system footprints.3 Fewer systems to maintain lead to power and cooling savings4, while also reducing operation and capital costs associated with drive replacements.5 And while footprint goes down, performance goes up.6 PCIe* acceleration blasts through SATA bottlenecks7, unleashing the full power of QLC. When coupled with optional Intel® Optane™ technology, Intel® 3D NAND Technology datacenter products deliver even better performance2, accelerating access to data needed most.

Do more, store more, and save more with Intel® QLC Technology featured in the Intel® SSDs D5-P4320 and D5-P4326 Series-Currently shipping in limited quantities and available broadly winter, 2018.

Amazing Is Now Affordable

Intel® QLC 3D NAND Technology enables consumers to tackle today’s storage needs and prepare for the growing demands of tomorrow. These client SSDs pack in more data than TLC-based storage, allowing up to 2x more capacity in identical footprints.1 Only Intel coupled this game-changing technology with PCIe* to deliver affordable PCIe performance.

Shop Intel® QLC 3D NAND SSD

Architected for Capacity and Reliability

Intel® 3D NAND Technology is an innovative response to the industry’s growing demand for data storage capacity. Compared to other available NAND solutions, Intel® 3D NAND Technology is designed on floating gate architecture with a smaller cell size and a highly efficient memory array, which enables higher capacity solutions and high reliability with strong protection from charge loss.

See How 3D NAND Advances Storage

Intel® 3D NAND Technology accelerates Moore's Law into three dimensions, overcoming the capacity limitations of traditional 2D NAND technology. The vertical layering of our 3D NAND enables higher areal density today, with scalability for the future.

Innovation Leadership

64-Layer Breakthrough

Intel has applied 30 years of flash cell experience to transition NAND from 2D to 3D, multi-level cell (MLC) to tri-level cell (TLC), and 32-layer to our breakthrough 64-layer technology. All of this is done to deliver the highest areal density8 and rapidly grow storage capacities in 3D NAND solutions.

Expansive Portfolio

Built on a Proven Process

With 3D NAND technology, Intel delivers innovative, high-value capabilities into a broad product portfolio. Our experience of designing this architecture into SSD solutions enables us to rapidly improve performance, power consumption, performance consistency, and reliability with each generation.

Manufacturing Scalability

Enabling Disruptive Opportunities

Intel is using manufacturing processes proven by decades of high volume output to build 3D NAND technology. With strong generational synergy across our factory network, Intel expects to grow 3D NAND capacity faster than the market, enabling us to deliver disruptive total cost of ownership and application acceleration to our customer base.

제품 및 성능 정보


3중 레벨 셀(TLC)에는 셀당 3비트, 4중 레벨 셀(QLC)에는 셀당 4비트가 포함됩니다. 셀당 (4-3)/3 = 33% 더 많은 비트로 계산되었습니다.



4노드 vSAN 클러스터 – 1노드 시스템 구성: 서버 모델: 인텔 Purley S2600WF(R2208WFTZS), MB: H48104-850, CPU: 듀얼 인텔® 제온® 골드 6142 2.6G 프로세서, 16C/32T, 10.4GT/s, 22M 캐시, 터보, HT(150W) DDR4-2666, 메모리: 16GB RDIMM, 2666MT/s, 듀얼 랭크 x16, NIC: 인텔 X520-DA2 10GbE SFP+ DAC 및 임베디드 인텔 X722 10GbE LAN. 모든 TLC 구성: 캐시용 2x 인텔® SSD 데이터 센터 P4610 시리즈 1.6TB와 용량 스토리지용 4x 인텔® SSD 데이터 센터 P4510 시리즈 4.0TB, 인텔® Optane™ 메모리+QLC 구성: 캐시용 2x 인텔® Optane™ SSD DC P4800X 375GB와 용량 스토리지용 2x 인텔® SSD D5-P4320 7.68TB. 2 워크로드: HCIBench: VM 수: 16, 데이터 디스크 수: 8, 데이터 디스크 크기: 60, 테스트 디스크 수: 8, 작업 세트 백분율: 100, 디스크당 스레드 수: 4, 블록 크기: 4K, 읽기 백분율: 70, 랜덤 백분율: 50, 테스트 시간: 3600. 결과: P4610+P4510 구성 = 83,451 IOP @ 6.3ms 지연 시간. P4800x+P43220 구성 = 346,644 IOP @ 1.52ms 지연 시간. 



2U당 최대 24개 HDD와 총 20U 및 총 960TB를 지원하는 3.5’ 4TB WD 골드 TB 엔터프라이즈급 7200 RPM HDD와 1U당 최대 32개 HDD와 총 1U 및 총 983TB를 지원하는 30.72TB E1.L 인텔® SSD D-5 P4326(향후 출시 예정) 비교. 결과적으로 20RU와 1RU의 차이.



전원, 냉각, 통합 비용 절감. HDD: 7.2K RPM 4TB HDD, 2.00% AFR, 7.7W 활성 전력, 2U의 24개 드라이브(총 전력 1971W) SSD: 22W 활성 전력, 44% AFR, 1U의 32개 드라이브(총 전력 704W) 기준. 냉각 비용은 배포 기간 5년, Kwh 비용 $0.158, 냉각 전력 1와트 1.20, 3.5” HDD 2U 24개 드라이브 및 EDSFF 1U Long 1U 32개 드라이브 기준. 하이브리드 스토리지는 캐시용으로 인텔® 트랜스포밍 러닝 코스(인텔® TLC) SSD 사용 기준.



드라이브 교체 비용 절감. 계산: HDD 2% AFR x 256개 드라이브 x 5년 = 5년간 25.6번 교체, SSD: 0.44% AFR x 32개 드라이브 x 5년 = 5년간 0.7번 교체.



인텔 D5-P4320 SSD와 Toshiba N300 HDD의 4K 랜덤 읽기 IOP 및 대기열 크기 32 비교. 175,000 IOP: 인텔 D5-P4320 7.68TB SSD에서 측정된 데이터. 4K 랜덤 읽기 IOP, 대기열 크기 32. 532 IOP: Toshiba N300 8TB 7.2K RPM HDD에 대한 Tom’s Hardware 벤치마크 기준. 4K 랜덤 읽기 IOP, 대기열 크기 32:,5277-2.html. 결과적으로 4K 랜덤 읽기 IOP가 329배 향상.



PCIe* IOP는 시뮬레이션된 4K 랜덤 읽기, 대기열 크기 256, 인텔에서 다양한 용량(3.84TB, 7.68TB, 15.36TB, 30.72TB)의 인텔 D5-P4320/D5-P4326 PCIe* 기반 QLC SSD에 대해 실시한 성능 추정치 기준입니다. SATA IOP는 현재 경쟁사 제품인 Micron의 SATA 기반 SSD의 최대 가능치인 100K IOP를 기준으로 모든 용량에 대해 100K IOP로 설정되었습니다. 3.84TB 및 7.68TB SKU에 대한 95K IOP 중 최대 4K 랜덤 읽기 QD32 IOP를 보여주는 Micron 5200 Series NAND Flash SSD 데이터 시트. 데이터 시트 위치:{1E253C11-6399-4D14-A445-F1DE2EB7ECAC}



512GB 인텔® 3D NAND에 대한 인텔 측정 데이터의 영역 밀도와 2017 IEEE International Solid-State Circuits Conference 문서에서 인용된 대표적 경쟁사 Samsung Electronics 및 Western Digital/Toshiba의 64-스택 3D NAND 구성 요소용 다이 크기 비교.