Breakthrough Performance Expands Datasets, Eliminates Bottlenecks

Solve the most demanding storage and memory challenges with the Intel® Optane™ SSD DC P4800X/P4801X series.

Every day, the amount of data created across the world is exploding to new levels. Enterprises and cloud service providers thrive on this data to make critical decisions, gain new insights from the data, and differentiate services. But, today’s current storage technologies leave a gap in data storage tiers. DRAM is far too expensive to scale and while NAND has the capacity and cost structure to scale, it lacks sufficient performance to function in the memory space. To address the gap, a storage solution that behaves like system memory is needed.

Combines Attributes of Memory and Storage
The Intel® Optane™ SSD DC P4800X series is the first product to combine the attributes of memory and storage. With an industry-leading combination of high throughput, low latency, high QoS, and high endurance, this innovative solution is optimized to break through data access bottlenecks by providing a new data storage tier. The DC P4800X/ P4801X accelerates applications with fast caching and fast storage to increase scale per server and reduce transaction costs for latency sensitive workloads. In addition, the Intel® Optane™ DC P4800X enables data centers to deploy bigger and more affordable datasets to gain new insights from large memory pools.

High Throughput for Breakthrough Performance
Realize breakthrough application performance with the Intel® Optane™ DC P4800X/P4801X. It is designed to deliver up to 6x faster performance at low queue depth workloads,1 exhibiting extremely high throughput for single accesses and super low latency. Where NAND-based SSDs are often measured at a queue depth of 32 (SATA) or 128 (NVMe*) in order to showcase maximum throughput, the Intel® Optane™ DC P4800X/P4801X can reach as many as 550,000 IOPS at a queue depth of 16.2 This new technology is perfectly suited to accelerate enterprise applications to new, breakthrough levels of performance.

Low Latency: Responsive Under Load
With a new data storage tier created by Intel® Optane™ technology, data centers can consistently realize amazing response times under any workload. With NAND-based SSDs, random write operations require an immense amount of background media management. These tasks can add significant delay to the read operations. The Intel® Optane™ SSD DC P4800X/P4801X maintains consistent read response times regardless of the write throughput applied to the drive. Average read response times remain below <30μs while maintaining a 70/30 mixed read/write bandwidth of 2GB/s.2

Predictably Fast Service: QoS
In an environment of fast growing data and ever demanding needs, data centers must deploy solutions that enable predictably fast service. The Intel® Optane™ DC P4800X/ P4801X is ideal for critical applications with demanding latency requirements. Its 99% read response time is up to 63x better than that of a high-endurance NAND SSD under random write workload.3 Optimized to minimize delays in data access times, the Intel® Optane™ DC P4800X /P4801X results in faster time to insight for decision making. 

High Endurance
Endurance affects the life expectancy and costs of enterprise SSDs. The DC P4800X/P4801X is designed for high write environments, and can withstand intense write traffic that is typically demanded of memory. With its extremely high endurance, the life of the DC P4800X/P4801X is extended, making it suitable for write-intensive applications such as online transaction processing, high performance computing, write caching, boot, and logging.

Use Cases for Today’s Data Center
The Intel® Optane™ DC P4800X provides a new storage tier that breaks through the bottlenecks of traditional NAND storage to accelerate applications and enable more work to get done per server. This unique capability means data centers can explore three key use cases, including caching, fast storage, and extended memory. The DC P4801X can also provide fast logging, caching, boot, or extended memory. Caching and fast storage refer to the tiering and layering that support a better memory-to-storage hierarchy. The Intel® Optane™ SSD facilitates dynamic placement of data that enables fast access to both read and/or write data. In addition, this high performing SSD meets the requirement of an application to accelerate storage access.

An Intel® Optane™ SSD can also extend memory, offering bigger or more affordable memory by participating in a shared memory pool with DRAM at either the OS or application level. Bigger memory dramatically increases the size of ‘working sets’ to enable new insights from data in growing segments such as scientific computing, healthcare, and autonomous driving. More affordable memory means data centers can use Intel® Optane™ SSDs to displace some DRAM.

Intel® Optane™ SSD DC P4801X Series – Features & Specification

FEATURE

SPECIFICATION

Capacity per Form Factor

Half-height, Half-length (HHHL) Add-in-Card (AIC): 375GB, 750GB, 1.5TB

2.5” x15mm, Small Form Factor U.2: 375GB, 750GB, 1.5TB

P4801X: U.2: 100GB M.2: 100GB, 200GB, 375GB

Form Factor

Add-in-Card (AIC), Half-height, Half-length, Low-profile; U.2 2.5in, 15mm; M.2 110mm

Interface

PCIe* 3.0 x4, NVMe*

Latency (typical) R/W2

<10/12μs

Quality of Service (QoS): 99.999%2 4KB Random, Queue Depth 1, Read/Write: <60/100 μs; 4KB Random, Queue Depth 16, R/W: <150/200 μs
Throughput2 4KB Random, Queue Depth 16, Read/Write: up to 550/550k IOPS
4KB Random, Queue Depth 16, Mixed 70/30 Read/Write: up to 500k IOPS
Endurance (JESD219 workload)
Drive Writes per Day=DWPD; Petabytes Written=PBW
30 DWPD: 375GB - 20.5 PBW; 750GB - 41 PBW
60 DWPD: 100GB - 10.9 PBW; 200GB - 21.9 PBW; 375GB - 41.0 PBW; 750GB - 82.0 PBW; 1.5TB - 164 PBW
Power Enhanced power-loss data protection
P4800X: Active/Idle: Up to 18 W / 7 W
P4801X: Active/Idle: Up to 11 W / 3 W
For more up-to-date product specifications, visit ark.intel.com

Intel® SSD Data Center Family


제품 및 성능 정보

1

출처 - 인텔 테스트: 낮은 큐 크기에서 4K 70/30 RW 성능. FIO 3.1을 사용하여 측정했습니다. 공통 구성 - 인텔® 2U 서버 시스템, OS: CentOS* 7.5, 커널 4.17.6-1.el7.x86_64, CPU 인텔® 제온® 골드 6154 프로세서 @ 3.0GHz(18 코어) 2개, RAM 256GB DDR4 @ 2666MHz 구성 – 인텔® Optane™ SSD DC P4800X 375GB(인텔® SSD DC P4600 1.6TB과 비교). 인텔 마이크로코드: 0x2000043, 시스템 BIOS: 00.01.0013, ME 펌웨어: 04.00.04.294, BMC 펌웨어: 1.43.91f76955, FRUSDR: 1.43. 벤치마크 결과는 추가 테스트가 수행됨에 따라 수정이 필요할 수도 있습니다. 성능 결과는 2018년 11월 15일 목요일자 테스트를 기준으로 하며, 공개된 모든 보안 업데이트가 반영되어 있지 않을 수도 있습니다. 자세한 내용은 공개된 구성 정보를 참조하십시오. 어떤 제품도 절대적으로 안전할 수는 없습니다.

2

인텔 드라이브 평가 - 인텔® Optane™ SSD DC P4800X 375GB. 테스트 및 시스템 구성: CPU: 인텔® 제온® 프로세서 E5-2687W v4 3.0GHz 30MB 160W 12코어, CPU 소켓: 2, RAM 용량: 32GB, RAM 모델: DDR4 2133MHz, PCIe* 연결: CPU(PCH 레인 연결 아님), 칩셋: 인텔® C610 칩셋, BIOS: SE5C610.86B.01.01.0024.021320181901, 스위치/ReTimer 모델/공급업체: 인텔 A2U44X25NVMEDK, OS: CentOS* 7.3.1611, 커널: 4.14.50, FIO 버전: 3.5, NVMe* 드라이버: 받은 편지함, C-상태: 비활성화, 하이퍼 스레딩: 비활성화, (OS를 통한) CPU 거버너: 성능 모드, EIST(속도 단계): 비활성화, 인텔 터보 모드: 비활성화, P-상태 = 비활성화, IRQ 밸런싱 서비스(OS) = 꺼짐, SMP Affinity, OS에서 설정, QD1에서 I/O 폴링 모드 활용. 성능 결과는 2018년 8월 31일 금요일자 테스트를 기준으로 하며, 공개된 보안 업데이트가 반영되어 있지 않을 수도 있습니다. 자세한 내용은 공개된 구성 정보를 참조하십시오.

3

출처 – 인텔 테스트: 응답 시간은 FIO 3.1을 사용한 4K 랜덤 쓰기 워크로드 실행 중 큐 크기 1에서 측정된 평균 읽기 지연 시간을 의미합니다. 위의 각주 1에 설명된 구성을 확인하십시오.